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INTEGRATED CIRCUITS
DATA SHEET
TEA1068 Versatile telephone transmission circuit with dialler interface
Product specification Supersedes data of June 1990 File under Integrated Circuits, IC03 1996 Apr 23
Philips Semiconductors
Product specification
Versatile telephone transmission circuit with dialler interface
FEATURES * Voltage regulator with adjustable static resistance * Provides supply for external circuitry * Symmetrical high-impedance inputs (64 k) for dynamic, magnetic or piezoelectric microphones * Asymmetrical high-impedance input (32 k) for electret microphone * Dual-Tone Multi-Frequency (DTMF) signal input with confidence tone * Mute input for pulse or DTMF dialling * Power down input for pulse dial or register recall * Receiving amplifier for magnetic, dynamic or piezoelectric earpieces QUICK REFERENCE DATA SYMBOL VLN Iline line voltage line current TEA1068 TEA1068T ICC VCC internal supply current supply voltage for peripherals normal operation normal operation power down; input LOW power down; input HIGH Iline = 15 mA; MUTE = HIGH Ip = 1.2 mA Ip = 1.7 mA Gv voltage gain microphone amplifier receiving amplifier Gv Vexch Rexch Tamb line loss compensation gain control range exchange supply voltage exchange feeding bridge resistance range ambient operating temperature 44 17 5.5 24 0.4 -25 - - 5.9 - - 2.8 2.5 3.05 - 10 10 - - - - 0.96 55 PARAMETER CONDITIONS Iline = 15 mA MIN. 4.2 TYP. 4.45
TEA1068
* Large gain setting range on microphone and earpiece amplifiers * Line current-dependent line loss compensation facility for microphone and earpiece amplifiers * Gain control adaptable to exchange supply * DC line voltage adjustment facility. GENERAL DESCRIPTION The TEA1068 is a bipolar integrated circuit performing all speech and line interface functions required in fully electronic telephone sets. It performs electronic switching between dialling and speech.
MAX. 4.7 140 100 1.3 82
UNIT V mA mA mA A
- - 60 39 6.3 60 1 +75
V V dB dB dB V k C
ORDERING INFORMATION TYPE NUMBER TEA1068 TEA1068T PACKAGE NAME DIP18 SO20 DESCRIPTION plastic dual in-line package; 18 leads (300 mil) plastic small outline package; 20 leads; body width 7.5 mm VERSION SOT102-1 SOT163-1
1996 Apr 23
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Philips Semiconductors
Product specification
Versatile telephone transmission circuit with dialler interface
BLOCK DIAGRAM
TEA1068
handbook, full pagewidth
VCC 15 (17) IR 11 (12)
LN 1 (1) 6 (6) 5 (5) GAR QR+ QR-
TEA1068 TEA1068T
4 (4)
MIC+ MIC-
8 (9) 2 (2) 7 (7) GAS1
DTMF
13 (15)
dB
3 (3)
GAS2
MUTE PD
14 (16) 12 (14) SUPPLY AND REFERENCE AGC CIRCUIT
CURRENT REFERENCE 10 (11) VEE 16 (18) REG 17 (19) AGC 9 (10) STAB
MBH130
18 (20) SLPE
The figures in parentheses refer to the TEA1068T.
Fig.1 Block diagram.
1996 Apr 23
3
Philips Semiconductors
Product specification
Versatile telephone transmission circuit with dialler interface
PINNING PIN SYMBOL TEA1068 LN GAS1 GAS2 QR- QR+ GAR MIC- n.c. MIC+ STAB VEE IR n.c. PD DTMF MUTE VCC REG AGC SLPE 1 2 3 4 5 6 7 - 8 9 10 11 - 12 13 14 15 16 17 18 TEA1068T 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 positive line terminal gain adjustment transmitting amplifier gain adjustment transmitting amplifier inverting output receiving amplifier non-inverting output receiving amplifier gain adjustment receiving amplifier inverting microphone input not connected non-inverting microphone input current stabilizer negative line terminal receiving amplifier input not connected power-down input dual-tone multi-frequency input mute input positive supply decoupling voltage regulator decoupling automatic gain control input slope (DC resistance) adjustment DESCRIPTION
TEA1068
handbook, halfpage handbook, halfpage
LN LN GAS1 GAS2 QR- 1 2 3 4 18 SLPE GAS1 17 AGC GAS2 16 REG QR- 15 VCC
1 2 3 4
20 SLPE 19 AGC 18 REG 17 VCC 16 MUTE
QR+ 5 QR+ 5 GAR MIC- MIC+ STAB 6 7 8 9
MBH132 MBH131
TEA1068
14 MUTE GAR 13 DTMF MIC- 12 PD n.c. 8 11 IR MIC+ 10 VEE STAB 10 9 7 6
TEA1068T
15 DTMF 14 PD 13 n.c. 12 IR 11 VEE
Fig.2 Pin configuration TEA1068.
Fig.3 Pin configuration TEA1068T.
1996 Apr 23
4
Philips Semiconductors
Product specification
Versatile telephone transmission circuit with dialler interface
FUNCTIONAL DESCRIPTION Supplies: VCC, LN, SLPE, REG and STAB Power for the TEA1068 and its peripheral circuits is usually obtained from the telephone line. The TEA1068 develops its own supply at VCC and regulates its voltage drop. The supply voltage VCCmay also be used to supply external circuits, e.g. dialling and control circuits. Decoupling of the supply voltage is performed by a capacitor between VCC and VEE the internal voltage ; regulator is decoupled by a capacitor between REG and VEE . The DC current flowing into the set is determined by the exchange voltage (Vexch, the feeding bridge resistance, ) (Rexch) and the DC resistance of the telephone line (Rline). An internal current stabilizer is set by a resistor of 3.6 k between the current stabilizer pin STAB and VEE (see Fig.9). If the line current Iline exceeds the current ICC+ 0.5 mA required by the circuit itself (approximately 1 mA) plus the current Ip required by the peripheral circuits connected to VCC, then the voltage regulator diverts the excess current via LN. The regulated voltage on the line terminal (VLN can be ) calculated as: VLN = Vref + I SLPE R9 x or VLN= Vref + [(Iline- ICC - 0.5 x 103) - Ip] x R9 where Vref is an internally generated temperature compensated reference voltage of 4.2 V and R9 is an external resistor connected between SLPE and VEE. The preferred value for R9 is 20 . Changing the value of R9 will also affect microphone gain, DTMF gain, gain control characteristics, side-tone level, the maximum output swing on LN and the DC characteristics (especially at lower voltages). Under normal conditions, when ISLPE >> ICC + 0.5 mA + Ip, the static behaviour of the circuit is that of a 4.2 V regulator diode with an internal resistance equal to that of R9. In the audio frequency range, the dynamic impedance is largely determined by R1 (see Fig.4). The internal reference voltage can be adjusted by means of an external resistor (RVA). This resistor, connected between LN and REG, will decrease the internal reference voltage; when connected between REG and SLPE, it will increase the internal reference voltage. Current (Ip) available from VCC for supplying peripheral circuits 1996 Apr 23 5
TEA1068
depends on external components and on the line current. Figure 10 shows this current for VCC > 2.2 V and for VCC> 3 V, this being the minimum supply voltage for most CMOS circuits, including voltage drop for an enable diode. If MUTE is LOW, the available current is further reduced when the receiving amplifier is driven.
LN handbook, halfpage Leq Vref R9 20 VEE Rp REG C3 4.7 F
MBA454
R1 VCC C1 100 F
Rp = 17.5 k Leq = C3 x R9 x Rp
Fig.4 Equivalent impedance circuit.
Microphone inputs MIC+ and MIC- and gain adjustment pins GAS1 and GAS2 The TEA1068 has symmetrical microphone inputs. Its input impedance is 64 k (2 x 32 k) and its voltage gain is typically 52 dB (when R7 = 68 k; see Fig.14). Dynamic, magnetic, piezoelectric or electret (with built-in FET source followers) microphones can be used. The arrangements with the microphone types mentioned are shown in Fig.11. The gain of the microphone amplifier can be adjusted between 44 dB and 60 dB. The gain is proportional to the value of the external resistor R7 connected between GAS1 and GAS2. An external capacitor C6 of 100 pF between GAS1 and SLPE is required to ensure stability. A larger value may be chosen to obtain a first-order low-pass filter. The cut-off frequency corresponds with the time constant R7 x C6.
Philips Semiconductors
Product specification
Versatile telephone transmission circuit with dialler interface
Mute input (MUTE) A HIGH level at MUTE enables the DTMF input and inhibits the microphone and the receiving amplifier inputs. A LOW level or an open circuit has the reverse effect. MUTE switching causes only negligible clicks at the earpiece outputs and on the line. Dual-Tone Multi Frequency input (DTMF) When the DTMF input is enabled, dialling tones may be sent onto the line. The voltage gain from DTMF to LN is typically 25.5 dB (when R7 = 68 k) and varies with R7 in the same way as the gain of the microphone amplifier. The signalling tones can be heard in the telephone earpiece at a low level (confidence tone). Receiving amplifier: IR, QR+, QR- and GAR The receiving amplifier has one input IR and two complementary outputs, a non-inverting output QR+ and an inverting output QR-. These outputs may be used for single-ended or for differential drive depending on the sensitivity and type of earpiece used (see Fig.12). Gain from IR to QR+ is typically 25 dB (when R4 = 100 k). This is sufficient for low-impedance magnetic or dynamic microphones, which are suited for single-ended drive. By using both outputs (differential drive), the gain is increased by 6 dB. This feature can be used when the earpiece impedance exceeds 450 , (high-impedance dynamic or piezoelectric types). The output voltage of the receiving amplifier is specified for continuous-wave drive. The maximum output voltage will be higher under speech conditions where the ratio of peak to RMS value is higher. The receiving amplifier gain can be adjusted between 17 dB and 33 dB with single-ended drive and between 26 dB and 39 dB with differential drive to suit the sensitivity of the transducer used. The gain is set by the external resistor R4 connected between GAR and QR+. Overall receive gain between LN and QR+ is calculated by subtracting the anti-side-tone network attenuation (32 dB) from the amplifier gain. Two external capacitors, C4 = 100 pF and C7 = 10 x C4 = 1 nF, are necessary to ensure stability. A larger value of C4 may be chosen to obtain a first-order, low-pass filter. The `cut-off' frequency corresponds with the time constant R4 x C4. Automatic Gain Control input AGC
TEA1068
Automatic line loss compensation is achieved by connecting a resistor R6 between AGC and VEE. This automatic gain control varies the microphone amplifier gain and the receiving amplifier gain in accordance with the DC line current. The control range is 5.9 dB. This corresponds to a line length of 5 km for a 0.5 mm diameter copper twisted-pair cable with a DC resistance of 176 /km and an average attenuation 1.2 dB/km. Resistor R6 should be chosen in accordance with the exchange supply voltage and its feeding bridge resistance (see Fig.13 and Table 1). Different values of R6 give the same ratio of line currents for start and end of the control range. If automatic line loss compensation is not required, AGC may be left open. The amplifiers then all give their maximum gain as specified. Power-Down input (PD) During pulse dialling or register recall (timed loop break), the telephone line is interrupted. During these interruptions, the telephone line provides no power for the transmission circuit or circuits supplied by VCC. The charge held on C1 will bridge these gaps. This bridging is made easier by a HIGH level on the PD input, which reduces the typical supply current from 1 mA to 55 A and switches off the voltage regulator, thus preventing discharge through LN. When PD is HIGH, the capacitor at REG is disconnected with the effect that the voltage stabilizer will have no switch-on delay after line interruptions. This minimizes the contribution of the IC to the current waveform during pulse dialling or register recall. When this facility is not required, PD may be left open-circuit. Side-tone suppression Suppression of the transmitted signal in the earpiece is obtained by the anti-side-tone network consisting of R1//Zline, R2, R3 and Zbal (see Fig.14). Maximum compensation is obtained when the following conditions are fulfilled: R9 x R2 = R1 ( R3 + [ R8//Z bal ] ) (1) [ Z bal ( Z bal + R8 ) = Z line ( Z line + R1 ) ] (2)
1996 Apr 23
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Philips Semiconductors
Product specification
Versatile telephone transmission circuit with dialler interface
If fixed values are chosen for R1, R2, R3 and R9, then condition (1) will always be fulfilled, provided that R8//Zbal << R3. To obtain optimum side-tone suppression, condition (2) has to be fulfilled, resulting in: Zbal = (R8/R1) Zline = k x Zline, where k is a scale factor: k = (R8/R1). Scale factor k (dependent on the value of R8) must be chosen to meet the following criteria: 1. Compatibility with a standard capacitor from the E6 or E12 range for Zbal 2. Zbal//R8<< R3 to fulfil condition (1) and thus ensuring correct anti-side-tone bridge operation 3. Zbal + R8>> R9 to avoid influencing the transmitter gain. In practice, Zline varies greatly with the line length and cable type; consequently, an average value has to be
TEA1068
chosen for Zbal, thus giving an optimum setting for short or long lines. Example: the balanced line impedance (Zbal) at which the optimum suppression is preset can be calculated by: Assume Zline = 210 + (1265 /140 nF), representing a 5 km line of 0.5 mm diameter, copper, twisted-pair cable matched to 600 (176 /km; 38 nF/km). When k = 0.64, then R8 = 390 ; Zbal = 130 + (820 //220 nF). The anti-side-tone network for the TEA1060 family shown in Fig.5 attenuates the signal received from the line by 32 dB before it enters the receiving amplifier. The attenuation is almost constant over the whole audio frequency range. Figure 6 shows a conventional Wheatstone bridge anti-side-tone circuit that can be used as an alternative. Both bridge types can be used with either resistive or complex set impedances.
handbook, full pagewidth
LN
Zline
R1
R2
VEE
im R3 R9 R8 SLPE Zbal
IR Rt
MSA500
Fig.5 Equivalent circuit of TEA1060 family anti-side-tone bridge.
1996 Apr 23
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Philips Semiconductors
Product specification
Versatile telephone transmission circuit with dialler interface
TEA1068
ndbook, full pagewidth
LN
Zline
R1
Zbal
VEE
im
IR Rt
R9
R8
RA
SLPE
MSA501
Fig.6 Equivalent circuit of an anti-side-tone network in a Wheatstone bridge configuration.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VLN VLN(R) VLN(RM) Iline Vn Ptot PARAMETER positive continuous line voltage repetitive line voltage during switch-on or line interruption repetitive peak line voltage for a 1 ms pulse R9 = 20 ; per 5 s R10 = 13 ; (Fig.15) line current voltage on any other pin total power dissipation TEA1068 TEA1068T Tstg Tamb Tj Notes 1. Mostly dependent on the maximum required Tamb and on the voltage between LN and SLPE. See Figs 7 and 8 to determine the current as a function of the required voltage and the temperature. 2. Calculated for the maximum ambient temperature specified Tamb = 75 C and a maximum junction temperature of 125 C. IC storage temperature operating ambient temperature junction temperature R9 = 20 ; note 2 - - -40 -25 - 769 555 +125 +75 125 mW mW C C C R9 = 20 ; note 1 CONDITIONS - - - - VEE - 0.7 MIN. MAX. 12 13.2 28 140 VCC + 0.7 V V V mA V UNIT
1996 Apr 23
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Philips Semiconductors
Product specification
Versatile telephone transmission circuit with dialler interface
THERMAL CHARACTERISTICS SYMBOL Rth j-a TEA1068 TEA1068T PARAMETER thermal resistance from junction to ambient in free air 65 90
TEA1068
VALUE
UNIT K/W K/W
handbook, halfpage I
160 LN (mA) 140
MBH133
MBH125
handbook, halfpage
150 ILN (mA) 130
(1)
120
(2)
110
100
(3)
90
(1) (2)
80
(4)
70
(3)
60
50
(4)
40 2 4 6 8 10 12 VLN-VSLPE (V)
30 2 4 6 8 10 12 VLN - VSLPE (V)
(1) (2) (3) (4)
Tamb = 45 C; Ptot = 1231 mW. Tamb = 55 C; Ptot = 1077 mW. Tamb = 65 C; Ptot = 923 mW. Tamb = 75 C; Ptot = 769 mW.
(1) (2) (3) (4)
Tamb = 45 C; Ptot = 888 mW. Tamb = 55 C; Ptot = 777 mW. Tamb = 65 C; Ptot = 666 mW. Tamb = 75 C; Ptot = 555 mW.
Fig.7 Safe operating area TEA1068.
Fig.8 Safe operating area TEA1068T.
1996 Apr 23
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Philips Semiconductors
Product specification
Versatile telephone transmission circuit with dialler interface
CHARACTERISTICS Iline = 10 to 140 mA; VEE = 0 V; f = 800 Hz; Tamb = 25 C; unless otherwise specified. SYMBOL Supplies: LN and VCC VLN voltage drop over circuit between LN and VEE microphone inputs open Iline = 5 mA Iline = 15 mA Iline = 100 mA Iline = 140 mA VLN/T VLN voltage drop variation with temperature voltage drop over circuit, between LN and VEE with external resistor RVA supply current Iline = 15 mA Iline = 15 mA RVA (LN to REG) = 68 k RVA (REG to SLPE) = 39 k VCC = 2.8 V PD = LOW PD = HIGH VCC supply voltage available for peripheral circuitry Iline = 15 mA; MUTE = HIGH Ip = 1.2 mA Ip = 0 mA Microphone inputs MIC+ and MIC- Zi input impedance differential between MIC+ and MIC- single-ended MIC+ or MIC- to VEE CMRR Gv Gvf GvT common mode rejection ratio voltage gain from MIC+/MIC- to LN Iline = 15 mA; R7 = 68 k; gain variation with frequency at f = 300 Hz and f = 3400 Hz gain variation with temperature at -25 C and +75 C with respect to 800 Hz Iline = 50 mA; with respect to 25 C; without R6 51 25.5 - 51 -0.5 - 64 32 82 52 0.2 0.2 2.8 3.5 3.05 3.75 - - 0.96 55 3.45 4.65 3.8 5 3.95 4.2 5.4 - -4 4.25 4.45 6.1 - -2 PARAMETER CONDITIONS MIN. TYP.
TEA1068
MAX.
UNIT
4.55 4.7 6.7 7.5 0
V V V V mV/K
4.1 5.35 1.3 82 - -
V V mA A V V
ICC
77 38.5 - 53 +0.5 -
k k dB dB dB dB
Dual-tone multi-frequency input DTMF Zi Gv Gvf GvT input impedance voltage gain from DTMF to LN gain variation with frequency at f = 300 Hz and f = 3400 Hz gain variation with temperature at Tamb = -25 C and +75 C gain variation with R7, transmitting amplifier Iline = 15 mA; R7 = 68 k with respect to 800 Hz Iline = 50 mA; with respect to 25 C 16.8 24.5 -0.5 - 20.7 25.5 0.2 0.5 24.6 26.5 +0.5 - k dB dB dB
Gain adjustment connections GAS1 and GAS2 Gv -8 - +8 dB
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Philips Semiconductors
Product specification
Versatile telephone transmission circuit with dialler interface
SYMBOL PARAMETER CONDITIONS MIN. TYP.
TEA1068
MAX.
UNIT
Transmitting amplifier output LN VLN(rms) output voltage (RMS value) Iline = 15 mA THD = 2% THD = 10% Vno(rms) noise output voltage (RMS value) Iline = 15 mA; R7 = 68 k; 200 between MIC- and MIC+; psophometrically weighted (P53 curve) 1.9 - - 2.3 2.6 -72 - - - V V dBmp
Receiving amplifier input IR Zi Zo Gv input impedance 17 - 24 30 -0.5 - 21 25 - 26 32 0 - k dB dB dB dB
Receiving amplifier outputs QR+ and QR- output impedance voltage gain from IR to QR+ or QR- single ended Iline = 15 mA RL (from QR+ or QR-) = 300 ; single-ended RL (from QR+ or QR-) = 600 ; differential Gvf GvT gain variation with frequency at f = 300 Hz and f = 3400 Hz gain variation with temperature at Tamb = -25 C and +75 C output voltage (RMS value) with respect to 800 Hz Iline = 50 mA; with respect to 25 C; without R6 sine wave drive; Iline = 15 mA; Ip = 0 mA; THD = 2%; R4 = 100 k single-ended; RL = 150 single-ended; RL = 450 differential; f = 3400 Hz; Rseries = 100 ; CL = 47 nF Vno(rms) noise output voltage (RMS value) Iline = 15 mA; R4 = 100 k; IR open-circuit psophometrically weighted (P53 curve) single-ended; RL = 300 differential; RL = 600 Gain adjustment GAR Gv gain variation of receiving amplifier achievable by varying R4 between GAR and QR -8 - +8 dB - - 50 100 - - V V 0.3 0.4 0.8 0.38 0.52 1.0 - - - V V V 25 31 -0.2 0.2 4
Vo(rms)
1996 Apr 23
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Philips Semiconductors
Product specification
Versatile telephone transmission circuit with dialler interface
SYMBOL MUTE input VIH VIL IMUTE Gv Gv HIGH level input voltage LOW level input voltage input current voltage gain reduction between MIC+ and MIC- to LN voltage gain from DTMF to QR+ or QR- MUTE = HIGH MUTE = HIGH; R4 = 100 k; single-ended; RL = 300 1.5 - - - -21 - - 8 70 -19 PARAMETER CONDITIONS MIN. TYP.
TEA1068
MAX.
UNIT
VCC 0.3 15 - -17
V V A dB dB
Power-Down input PD VIH VIL Ipd HIGH level input voltage LOW level input voltage input current in power-down condition 1.5 - - - - 5 VCC 0.3 10 V V A
Automatic Gain Control input AGC Gv gain control range from IR to QR+/QR- and from MIC+/MIC- to LN highest line current for maximum gain lowest line current for minimum gain voltage gain variation Iline = 70 mA; R6 = 110 k between AGC and VEE R6 = 110 k between AGC and VEE R6 = 110 k between AGC and VEE between Iline = 15 mA and Iline = 35 mA; R6 = 110 k between AGC and VEE -5.5 -5.9 -6.3 dB
Iline(H) Iline(L) Gv
- - -1.0
23 61 -1.5
- - -2.0
mA mA dB
andbook, full pagewidth
Rline
Iline ISLPE + 0.5 mA
R1 ICC LN VCC 0.5 mA C1 peripheral circuits Ip
TEA1068
Rexch DC AC Vexch REG STAB I SLPE C3 R5
SLPE
VEE
R9
MBH134
Fig.9 Supply arrangement.
1996 Apr 23
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Philips Semiconductors
Product specification
Versatile telephone transmission circuit with dialler interface
TEA1068
handbook, halfpage
3
MBH124
Ip (mA) 2
(1)
(2)
(3)
1
(4)
0 0 1 2 4 3V CC (V)
Curve (1) is valid when the receiving amplifier is not driven or when MUTE = HIGH. Curve (2) is valid when MUTE = LOW and the receiving amplifier is driven; Vo(rms) = 150 mV; RL = 150 asymmetrical. The supply possibilities can be increased simply by setting the voltage drop over the circuit VLN to a higher value by means of resistor RVA connected between REG and SLPE.
Fig.10 Typical current Ip available from VCC for peripheral circuitry with VCC 2.2 V.
handbook, full pagewidth
VCC MIC+
(1)
MIC-
MIC+
MIC-
MIC+ VEE
MIC-
MBH135
a. Magnetic or dynamic microphone.
b. Electret microphone.
c. Piezoelectric microphone.
(1) May be connected to decrease the terminating impedance.
Fig.11 Alternative microphone arrangements.
1996 Apr 23
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Philips Semiconductors
Product specification
Versatile telephone transmission circuit with dialler interface
TEA1068
handbook, full pagewidth
(1)
(2)
QR+ QR- VEE
QR+
QR+
QR+
QR-
QR-
QR-
MBH136
a. Dynamic earpiece with less than 450 impedance.
b. Dynamic earpiece with more than 450 impedance.
c. Magnetic earpiece with more than 450 impedance.
d. Piezoelectric earpiece.
(1) May be connected to prevent distortion (inductive load). (2) Required to increase the phase margin (capacitive load).
Fig.12 Alternative receiver arrangements.
dbook, full pagewidth
0 Gv (dB) -2
R6 =
MBH137
-4
48.7 k
78.7 k
110 k
140 k
-6
0
20
40
60
80
100
120
140 Iline(mA)
R9 = 20 .
Fig.13 Variation of gain with line current, with R6 as a parameter.
1996 Apr 23
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Philips Semiconductors
Product specification
Versatile telephone transmission circuit with dialler interface
Table 1
TEA1068
Values of resistor R6 for optimum line loss compensation, for various usual values of exchange supply voltage Vexch and exchange feeding bridge resistance Rexch; R9 = 20 R6 (k)
Vexch (V) 24 36 48 60
Rexch = 400 61.9 100 140 X
Rexch = 600 48.7 78.7 110 X
Rexch = 800 X 68 93.1 120
Rexch = 1000 X 60.4 82 102
handbook, full pagewidth
R1 620 IR MIC+ Vi MIC- VCC LN QR- 100 F RL 600 R4 100 k C4 100 pF
Iline
Vo
QR+
100 F C1
DTMF MUTE
TEA1068
GAR C7 1 nF GAS1 R7 68 k GAS2 10 to 140 mA
10 F PD Vi VEE REG AGC
STAB SLPE R5 3.6 k
C6 100 pF
C3 4.7 F
R6
R9 20
MBH138
Voltage gain is defined as; Gv = 20 log Vo/Vi. For measuring the gain from MIC+ and MIC-, the MUTE input should be LOW or open, for measuring the DTMF input, MUTE should be HIGH. Inputs not under test should be open.
Fig.14 Test circuit for defining voltage gain of MIC+, MIC- and DTMF inputs.
1996 Apr 23
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Philips Semiconductors
Product specification
Versatile telephone transmission circuit with dialler interface
TEA1068
handbook, full pagewidth
R1 620 IR MIC+ Vi 10 F MIC- DTMF QR+ R4 100 k C4 100 pF VCC LN 10 F QR- ZL Vo 100 F
I line
600
TEA1068
GAR GAS1
C1 100 F MUTE PD VEE REG AGC
C7 1 nF 10 to 140 mA R7 GAS2 STAB SLPE R5 3.6 k C6 100 pF
C3 4.7 F
R6
R9 20
MBH139
Voltage gain is defined as; Gv = 20 log Vo/Vi.
Fig.15 Test circuit for defining voltage gain of the receiving amplifier.
1996 Apr 23
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Philips Semiconductors
Product specification
Versatile telephone transmission circuit with dialler interface
APPLICATION INFORMATION
TEA1068
handbook, full pagewidth
R1 620 R10 13 R3 130 k C5 IR LN VCC C1 100 F
BAS11 (2x)
100 nF QR- R11 QR+ DTMF
telephone BZW14 line (2x)
R4 R3 3.92 k C7
C4 100 pF GAR 1 nF MIC+
TEA1068
MUTE PD
from dial and control circuits
MIC- SLPE R8 390 Zbal R9 20 C6 100 pF GAS1 GAS2 REG AGC STAB VEE
R7 C3 4.7 F R6 R5 3.6 k
MBH140
Typical application of the TEA1068, shown here with a piezoelectric earpiece and DTMF dialling. The bridge to the left and R10 limit the current into the circuit and the voltage across the circuit during line transients. Pulse dialling or register recall require a different protection arrangement.
Fig.16 Application diagram.
1996 Apr 23
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Philips Semiconductors
Product specification
Versatile telephone transmission circuit with dialler interface
TEA1068
handbook, full pagewidth
LN cradle contact
VCC DTMF
VDD TONE M1
TEA1068 MUTE
PD VEE
PCD3310
DP/FLO VSS
telephone line BSN254A
MBA279 - 1
The dashed lines show an optional flash (register recall by timed loop break).
Fig.17 DTMF set with a CMOS DTMF dialling circuit.
1996 Apr 23
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Philips Semiconductors
Product specification
Versatile telephone transmission circuit with dialler interface
PACKAGE OUTLINES DIP18: plastic dual in-line package; 18 leads (300 mil)
TEA1068
SOT102-1
D seating plane
ME
A2
A
L
A1
c Z e b1 b 18 10 b2 MH wM (e 1)
pin 1 index E
1
9
0
5 scale
10 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 4.7 0.19 A1 min. 0.51 0.020 A2 max. 3.7 0.15 b 1.40 1.14 0.055 0.044 b1 0.53 0.38 0.021 0.015 b2 1.40 1.14 0.055 0.044 c 0.32 0.23 0.013 0.009 D (1) 21.8 21.4 0.86 0.84 E (1) 6.48 6.20 0.26 0.24 e 2.54 0.10 e1 7.62 0.30 L 3.9 3.4 0.15 0.13 ME 8.25 7.80 0.32 0.31 MH 9.5 8.3 0.37 0.33 w 0.254 0.01 Z (1) max. 0.85 0.033
Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT102-1 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION
ISSUE DATE 93-10-14 95-01-23
1996 Apr 23
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Philips Semiconductors
Product specification
Versatile telephone transmission circuit with dialler interface
TEA1068
SO20: plastic small outline package; 20 leads; body width 7.5 mm
SOT163-1
D
E
A X
c y HE vMA
Z 20 11
Q A2 A1 pin 1 index Lp L 1 e bp 10 wM detail X (A 3) A
0
5 scale
10 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 2.65 0.10 A1 0.30 0.10 A2 2.45 2.25 A3 0.25 0.01 bp 0.49 0.36 c 0.32 0.23 D (1) 13.0 12.6 0.51 0.49 E (1) 7.6 7.4 0.30 0.29 e 1.27 0.050 HE 10.65 10.00 L 1.4 Lp 1.1 0.4 Q 1.1 1.0 0.043 0.039 v 0.25 0.01 w 0.25 0.01 y 0.1 0.004 Z
(1)
0.9 0.4 0.035 0.016
0.012 0.096 0.004 0.089
0.019 0.013 0.014 0.009
0.419 0.043 0.055 0.394 0.016
8o 0o
Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT163-1 REFERENCES IEC 075E04 JEDEC MS-013AC EIAJ EUROPEAN PROJECTION
ISSUE DATE 95-01-24 97-05-22
1996 Apr 23
20
Philips Semiconductors
Product specification
Versatile telephone transmission circuit with dialler interface
SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "IC Package Databook" (order code 9398 652 90011). DIP SOLDERING BY DIPPING OR BY WAVE The maximum permissible temperature of the solder is 260 C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg max). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. REPAIRING SOLDERED JOINTS Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 C, contact may be up to 5 seconds. SO REFLOW SOLDERING Reflow soldering techniques are suitable for all SO packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement.
TEA1068
Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 C. WAVE SOLDERING Wave soldering techniques can be used for all SO packages if the following conditions are observed: * A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. * The longitudinal axis of the package footprint must be parallel to the solder flow. * The package footprint must incorporate solder thieves at the downstream end. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 C within 6 seconds. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. REPAIRING SOLDERED JOINTS Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
1996 Apr 23
21
Philips Semiconductors
Product specification
Versatile telephone transmission circuit with dialler interface
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
TEA1068
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1996 Apr 23
22
Philips Semiconductors
Product specification
Versatile telephone transmission circuit with dialler interface
NOTES
TEA1068
1996 Apr 23
23
Philips Semiconductors - a worldwide company
Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. (02) 805 4455, Fax. (02) 805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. (01) 60 101-1256, Fax. (01) 60 101-1250 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. (172) 200 733, Fax. (172) 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. (359) 2 689 211, Fax. (359) 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS: Tel. (800) 234-7381, Fax. (708) 296-8556 Chile: see South America China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. (852) 2319 7888, Fax. (852) 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. (032) 88 2636, Fax. (031) 57 1949 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. (358) 0-615 800, Fax. (358) 0-61580 920 France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. (01) 4099 6161, Fax. (01) 4099 6427 Germany: P.O. Box 10 51 40, 20035 HAMBURG, Tel. (040) 23 53 60, Fax. (040) 23 53 63 00 Greece: No. 15, 25th March Street, GR 17778 TAVROS, Tel. (01) 4894 339/4894 911, Fax. (01) 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd. Worli, BOMBAY 400 018 Tel. (022) 4938 541, Fax. (022) 4938 722 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. (01) 7640 000, Fax. (01) 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, TEL AVIV 61180, Tel. (03) 645 04 44, Fax. (03) 648 10 07 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. (0039) 2 6752 2531, Fax. (0039) 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. (03) 3740 5130, Fax. (03) 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. (02) 709-1412, Fax. (02) 709-1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. (03) 750 5214, Fax. (03) 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. 9-5(800) 234-7831, Fax. (708) 296-8556 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. (040) 2783749, Fax. (040) 2788399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. (09) 849-4160, Fax. (09) 849-7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. (022) 74 8000, Fax. (022) 74 8341 Philippines: PHILIPS SEMICONDUCTORS PHILIPPINES Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. (63) 2 816 6380, Fax. (63) 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. (022) 612 2831, Fax. (022) 612 2327 Portugal: see Spain Romania: see Italy Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. (65) 350 2000, Fax. (65) 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. (011) 470-5911, Fax. (011) 470-5494 South America: Rua do Rocio 220 - 5th floor, Suite 51, CEP: 04552-903-SAO PAULO-SP, Brazil, P.O. Box 7383 (01064-970), Tel. (011) 821-2333, Fax. (011) 829-1849 Spain: Balmes 22, 08007 BARCELONA, Tel. (03) 301 6312, Fax. (03) 301 4107 Sweden: Kottbygatan 7, Akalla. S-16485 STOCKHOLM, Tel. (0) 8-632 2000, Fax. (0) 8-632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. (01) 488 2211, Fax. (01) 481 77 30 Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66, Chung Hsiao West Road, Sec. 1, P.O. Box 22978, TAIPEI 100, Tel. (886) 2 382 4443, Fax. (886) 2 382 4444 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. (66) 2 745-4090, Fax. (66) 2 398-0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. (0212) 279 2770, Fax. (0212) 282 6707 Ukraine: PHILIPS UKRAINE, 2A Akademika Koroleva str., Office 165, 252148 KIEV, Tel. 380-44-4760297, Fax. 380-44-4766991 United Kingdom: Philips Semiconductors LTD., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. (0181) 730-5000, Fax. (0181) 754-8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. (800) 234-7381, Fax. (708) 296-8556 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. (381) 11 825 344, Fax. (359) 211 635 777
Internet: http://www.semiconductors.philips.com/ps/ For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31-40-2724825 SCDS48 (c) Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
417021/10/ed/pp24 Document order number: Date of release: 1996 Apr 23 9397 750 00804

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